合金法实现ZnO的P型转化

全部作者：张景文 王洪波 侯洵第1作者单位：西安交通大学论文摘要：ZnO films were grown on Sapphire and n-type Silicon, and then deposited a gold film in some areas. After heat treatments in the air through gold alloy technics, they were employed to some electrical measurements. After treatment at the temperature of 850°C, ZnO, grown on sapphire and under gold layer, displayed super high resistivity. It seemed that the ZnO, grown on n-Si and under gold layer, displayed p-type conductivity, for diode-like I-V rectifying characteristics were observed between it and n-Si, and the ZnO layer, which was not deposited gold film. During the course of I-V characteristics measurement, the sample, grown on the n-Si and post treated at 750°C, appeared overflow twice, and then was observed stable rectifying characteristic. But the sample post treated at 650°C and lower temperature, was not observed rectifying characteristic. Farther experiment researches require to carried out.关键词：ZnO films, p-type Conversion, Gold Alloy (浏览全文)发表日期：2006年11月29日同行评议：

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